1 / 7 www.dynexsemi.com features ? double side cooling ? high surge capability applications ? rectification ? free - wheel diode ? dc motor control ? power supplies ? welding ? battery chargers voltage ratings part and ordering number repetitive peak voltages v drm and v drm v conditions drd2960y40 drd2960y39 drd2960y38 drd2960y37 DRD2960Y36 drd2960y35 4000 3900 3800 3700 3600 3500 v rsm = v rrm +100v lower voltage grades available. ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: drd2960 y37 for a 3700v device in a y outline note: please use the complete part number when ordering and quote this number in any future corresponde nce relating to your order. key parameters v rrm 4000v i f(av) 2956a i fsm 62500a (see package details for further information) fig. 1 package outlines drd2960y40 rectifier diode ds5983 january 2011 (ln28004 )
semiconductor drd2960y40 2 / 7 www.dynexsemi.com current ratings t case = 75c unless stated otherwise symbol parameter test conditions max. units double side cooled i f(av) mean forward current half wave resistive load 3830 a i f(rms) rms value - 6016 a i f continuous (direct) on - state current - 5597 a single side cooled (anode side) i f(av) mean forward current half wave resistive load 2525 a i f(rms) rms value - 3966 a i f continuous (direct) on - state current - 3421 a t case = 100c unless stated otherwise symbol parameter test conditions max. units double side cooled i f(av) mean forward current half wave resistive load 2956 a i f(rms) rms value - 4643 a i f continuous (direct) on - state current - 4218 a single side cooled (anode side) i f(av) mean forward current half wave resistive load 1913 a i f(rms) rms value - 3005 a i f continuous (direct) on - state current - 2514 a
- 3 - semiconductor drd2960y40 3 / 7 www.dynexsemi.com surge ratings symbol parameter test conditions max. units i fsm surge (non - repetitive) on - state current 10ms half sine, t case = 150c 50.0 ka i 2 t i 2 t for fusing v r = 50% v rrm - ? sine 12.5 ma 2 s i fsm surge (non - repetitive) on - state current 10ms half sine, t case = 150c 62.5 ka i 2 t i 2 t for fusing v r = 0 19.6 ma 2 s thermal and mechanical ratings symbol parameter test conditions min. max. units r th(j - c) thermal resistance C junction to case double side cooled dc - 0.0095 c/w single side cooled anode dc - 0.019 c/w cathode dc - 0.019 c/w r th(c - h) thermal resistance C case to heatsink clamping force 43kn double side - 0.002 c/w (with mounting compound) single side - 0.004 c/w t vj virtual junction temperature on - state (conducting) - 160 c reverse (blocking) - 150 c t stg storage temperature range - 55 150 c f m clamping force 38.0 47.0 kn
semiconductor drd2960y40 4 / 7 www.dynexsemi.com characteristics symbol parameter test conditions min. max. units v fm forward voltage at 3000a peak, t case = 25c - 1.15 v i rm peak reverse current at v drm, t case = 150c - 250 ma q s total stored charge i f = 2000a, di rr /dt =3a/s - 5000 c i rr peak reverse recovery current t case = 150c, v r =100v - 150 a v to threshold voltage at t vj = 150c - 0.75 v r t slope resistance at t vj = 150c - 0.118 m ? curves fig.2 maximum (limit) on - state characteristics fig.3 dissipation curves v tm equation where a = - 0.15357 b = 0.177571 v tm = a + bln (i t ) + c.i t +d. ? i t c = 0.000179 d = - 0.01294 these values are valid for t j = 150c for i f 500a to 5000a 0 2000 4000 6000 8000 10000 0 2000 4000 6000 8000 mean power dissipation - (w) mean forward current i f(av) - (a) dc 1/2 wave 3 phase sq. 6 phase sq.
- 5 - semiconductor drd2960y40 5 / 7 www.dynexsemi.com fig.4 total stored charge fig.5 maximum reverse recovery current fig.6 surge (non - repetitive) forward current vs time (with 50% v rrm at t case 150c) fig.7 maximum (limit) transient thermal impedance - junction to case
semiconductor drd2960y40 6 / 7 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. normal weight: 1600g clamping force: 43kn10% package outline type code:y note: some packages may be supplied with gate and or tags.
- 7 - semiconductor drd2960y40 7 / 7 www.dynexsemi.com important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained technical personnel. due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot constitute any guarantee of suitability for use in a specific application . the user must evaluate the suitability of the product and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any war ning requirements are met. should additional product information be needed please contact customer service. although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typograp hical errors. the info rmation is provided without any warranty or guarantee of any kind. this publication is an uncontrolled document and is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a pro duct failure or malfunction. the products must not be touched when operating because there is a danger of electrocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even whe n disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature produc t failure. use outside the product ratings is likely to cause permanent damage to the product. in extreme conditions, as with all semiconductors, this m ay include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in f ire or explosion. appropriate application design and safety precautions should always be followed to protect persons and property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. the annotations are as follows: - target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has b een started. preliminary information: the product design is complete and final characterisation for volume production is in progress.the datasheet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless otherwise notified by dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided sub ject to dynexs conditions of sale, which are available on request. any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. headquarters operations dynex semiconductor limited doddington road, lincoln, lincolnshire, ln6 3lf united kingdom. phone: +44 (0) 1522 500500 fax: +44 (0) 1522 500550 web: http://www.dynexsemi.com customer service phone: +44 (0) 1522 502753 / 502901 fax: +44 (0) 152 2 500020 e - mail: power_solutions@dynexsemi.com ? dynex semiconductor ltd. technical documentation C not for resale .
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